F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
The growth of epitaxial layers of hexagonal θ -nickel-silicide on Si(100) and Si(111) substrates is reported. They form at 370°C on Si(100) and 360°C on Si(111), from codeposited Ni/Si mixtures, containing 37 to 42 atom % Si and the equivalent of a 50 nm Ni layer. These codeposited layers model the Ni/Si mixing layer at the interface in sputter-deposited films. The occurrence and stability at room temperature conflict with the phase diagram for bulk Ni/Si. Congruent crystallization is shown to initiate the growth of this metastable phase. © 2008 The Electrochemical Society.
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
David B. Mitzi
Journal of Materials Chemistry
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997