Towards implementation of a nickel silicide process for CMOS technologies
- C. Lavoie
- F.M. D'Heurle
- et al.
- 2003
- Microelectronic Engineering
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198 results for Christian Lavoie
Thermodynamics and kinetics of room-temperature microstructural evolution in copper films
- C. Detavernier
- S.M. Rossnagel
- et al.
- 2003
- Journal of Applied Physics
Thermal expansion of the isostructural PtSi and NiSi: Negative expansion coefficient in NiSi and stress effects in thin films
- C. Detavernier
- C. Lavoie
- et al.
- 2003
- Journal of Applied Physics
Two gates are better than one
- P. Solomon
- K.W. Guarini
- et al.
- 2003
- IEEE Circuits and Devices Magazine
Kinetics of agglomeration of NiSi and NiSi2 phase formation
- C. Detavernier
- A.S. Özcan
- et al.
- 2002
- MRS Proceedings 2002
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
- Jakub Kedzierski
- Edward Nowak
- et al.
- 2002
- IEDM 2002
Performance enhancement on sub-70 nm strained silicon SOI MOSFETS on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D
- B.H. Lee
- A.C. Mocuta
- et al.
- 2002
- IEDM 2002
Influence of substrate temperature during sputter deposition on the subsequent formation of titanium disilicide
- A.S. Özean
- K.F. Ludwig Jr.
- et al.
- 2002
- MRS Proceedings 2002
Texture formation in Ti-Ta alloy disilicide thin films
- A.S. Özcan
- K.F. Ludwig Jr.
- et al.
- 2002
- Journal of Applied Physics
Texture of TiSi 2 thin films on Si (001)
- A.S. Özcan
- K.F. Ludwig Jr.
- et al.
- 2002
- Journal of Applied Physics