T.W. Hickmott, P. Solomon, et al.
Journal of Applied Physics
A planar, triple-self-aligned, double-gate GET process is implemented where a unique sidewall source/drain structure permits self-aligned patterning of the back-gate layer after the source/drain (S/D) structure is in place. This allows coupling the silicon thickness control inherent in a planar, unpatterned layer with VLSI self-alignment techniques and also gives independently controlled front and back gates. Moreover, double-gate FET (DGFET) operation is demonstrated with good transport at both interfaces.
T.W. Hickmott, P. Solomon, et al.
Journal of Applied Physics
P. Solomon
Annual Review of Materials Science
G.M. Cohen, C. Cabral Jr., et al.
MRS Proceedings 2002
K.W. Guarini, A. Topol, et al.
IEDM 2002