Mechanisms for enhanced C54-TiSi2 formation in Ti-Ta alloy films on single-crystal Si
- A. Quintero
- M. Libera
- et al.
- 1999
- Journal of Materials Research
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198 results for Christian Lavoie
In situ characterization of titanium silicide formation: The effect of Mo interlayer, temperature ramp-rate, and annealing atmosphere
- S.-L. Zhang
- C. Lavoie
- et al.
- 1999
- Journal of Applied Physics
Interdiffusion studies of single crystal TiN/NbN superlattice thin films
- C. Engström
- J. Birch
- et al.
- 1999
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Enhanced thermal stability of C49 TiSi2 in the presence of aluminum
- S.-L. Zhang
- F.M. D'Heurle
- et al.
- 1998
- Applied Physics Letters
Is selective CVD an improvement for the titanium silicide process in sub-quarter micron technology? A phase formation study using x-ray diffraction
- R.A. Roy
- Cryil Cabral Jr.
- et al.
- 1998
- MRS Spring Meeting 1998
Templating Effects On C54-Tisi2 Formation In Ternary Reactions.
- A. Quintero
- M. Libera
- et al.
- 1998
- Microscopy and Microanalysis
Is selective CVD an improvement for the titanium silicide process in sub-quarter micron technology? A phase formation study using x-ray diffraction
- R.A. Roy
- Cryil Cabral Jr.
- et al.
- 1998
- MRS Spring Meeting 1998
Low temperature formation of C54-TiSi2 using titanium alloys
- C. Cabral Jr.
- L. Clevenger
- et al.
- 1997
- Applied Physics Letters
Surface roughening during titanium silicide formation: A comparison between Si(100) and poly-Si substrates
- C. Lavoie
- R. Martel
- et al.
- 1996
- MRS Fall Meeting 1996
Crystallographic texture of C54 titanium disilicide as a function of deep submicron structure geometry
- V. Svilan
- K.P. Rodbell
- et al.
- 1997
- Journal of Electronic Materials