Highly-selective superconformai CVD Ti silicide process enabling area-enhanced contacts for next-generation CMOS architectures
- Nicolas Breil
- A. Carr
- et al.
- 2017
- VLSI Technology 2017
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194 results for Christian Lavoie
Resistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm2
- Adam Pyzyna
- Hsinyu Tsai
- et al.
- 2017
- IITC 2017
Contacts in advanced CMOS: History and emerging challenges
- Christian Lavoie
- Praneet Adusumilli
- et al.
- 2017
- ECS Meeting 2017 - New Orleans
Formation and microstructure of thin Ti silicide films for advanced technologies
- Praneet Adusumilli
- A. Carr
- et al.
- 2016
- IITC/AMC 2016
Influence of alloying elements on the phase formation of ultrathin Ni (<10nm) on Si(001) substrates
- F.A. Geenen
- K. Van Stiphout
- et al.
- 2015
- IITC/MAM 2015
Resistivity of copper interconnects beyond the 7 nm node
- Adam Pyzyna
- Robert L. Bruce
- et al.
- 2015
- VLSI Technology 2015
Improved frequency response in a SiGe npn device through improved dopant activation
- Jim Adkisson
- Marwan H. Khater
- et al.
- 2012
- ECS Meeting 2012
Leakage and contact resistance reduction by diffusion of dopants in NiPt suicide
- Ahmet Ozcan
- Ming Cai
- et al.
- 2011
- ADMETA 2011
A 0.021 μm2 trigate SRAM cell with aggressively scaled gate and contact pitch
- Michael A. Guillorn
- Josephine Chang
- et al.
- 2011
- VLSI Technology 2011
Phase formation and stability of Ni silicide contacts - Scaling to ultra-thin films
- C. Detavernier
- K. De Keyser
- et al.
- 2010
- ICSICT 2010