Huiling Shang, Sameer Jain, et al.
VLSI Technology 2012
We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.
Huiling Shang, Sameer Jain, et al.
VLSI Technology 2012
Lukas Jablonka, Tomas Kubart, et al.
JVSTB
Mehmet Alper Sahiner, Rory J. Vander Valk, et al.
Applied Physics Letters
Paul R. Besser, Christian Lavoie, et al.
ECS Meeting 2008