Ionized-PVD stacked barrier structure of TaN/TaRu for 32nm BEOL integration
- Takeshi Nogami
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
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32 results for Soon-Cheon Seo
Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Copper contact metallization for 22 nm and beyond
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2009
- IITC 2009
Electromigration Cu mass flow in Cu interconnections
- C.-K. Hu
- D. Canaperi
- et al.
- 2006
- Thin Solid Films
Electrical and reliability evaluation of Cu/Low-k integration: Exploration of PVD barrier/seed and CVD SiC(N,H) cap depositions
- C.-C. Yang
- D. Edelstein
- et al.
- 2004
- ADMETA 2004
Extendibility study of PVD Cu seedlayers in 90nm-groundrule lines and vias
- A. Simon
- S.B. Law
- et al.
- 2004
- AMC 2004
Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects
- C.-K. Hu
- D. Canaperi
- et al.
- 2004
- IRPS 2004
Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects
- C.-K. Hu
- D. Canaperi
- et al.
- 2004
- IRPS 2004
A high performance 0.13 μm copper BEOL technology with low-k dielectric
- R.D. Goldblatt
- B.N. Agarwala
- et al.
- 2000
- IITC 2000
CMP Challenges for Advanced Technology Nodes
- John H Zhang
- Haigou Huang
- et al.
- 2017
- MRS Advances