High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
Publications
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21 results for Cathryn Christiansen
Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals
- Takeshi Nogami
- C. Penny
- et al.
- 2012
- IEDM 2012
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
- W.-H. Lee
- A. Waite
- et al.
- 2005
- IEDM 2005
ALD TaN barrier for enhanced performance with low contact resistance for 14 nm Technology Node Cu Interconnects
- Joyeeta Nag
- Brian A. Cohen
- et al.
- 2015
- ECS Meeting 2015 Phoenix
Electromigration characteristics of power grid like structures
- Baozhen Li
- Andrew Kim
- et al.
- 2018
- IRPS 2018
Time-dependent series resistance and implications for voltage acceleration models in BEOL TDDB
- Andrew Kim
- Baozhen Li
- et al.
- 2016
- IRPS 2016
Co capping layers for Cu/low-k interconnects
- C.-C. Yang
- P. Flaitz
- et al.
- 2010
- ADMETA 2010
CoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- E. Huang
- M. Oh
- et al.
- 2009
- ADMETA 2009
Minimum void size and 3-parameter lognormal distribution for em failures in Cu interconnects
- Baozhen Li
- Cathryn Christiansen
- et al.
- 2006
- IRPS 2006