FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
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28 results for Reinaldo A. Vega
High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
Understanding short channel mobility degradation by accurate external resistance decomposition and intrinsic mobility extraction
- Tao Chu
- Reinaldo A. Vega
- et al.
- 2015
- Journal of Applied Physics
Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates
- K. Cheng
- S.-C. Seo
- et al.
- 2014
- VLSI Technology 2014
10nm FINFET technology for low power and high performance applications
- D. Guo
- H. Shang
- et al.
- 2014
- ICSICT 2014
High performance bulk planar 20nm CMOS technology for low power mobile applications
- Huiling Shang
- Sameer Jain
- et al.
- 2012
- VLSI Technology 2012
Study of random dopant fluctuation effects in Germanium-source tunnel FETs
- Nattapol Damrongplasit
- Changhwan Shin
- et al.
- 2011
- IEEE T-ED
Comparative study of FinFET versus quasi-planar HTI MOSFET for ultimate scalability
- Reinaldo A. Vega
- Tsu-Jae King Liu
- 2010
- IEEE T-ED