Radiation damage and its effect on hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron x-ray lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1990
- Journal of Electronic Materials
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123 results for Tak H. Ning
Hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron X-ray lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1989
- IRPS 1989
Design and technology challenges for sub-0.5 μm CMOS and bipolar
- T.H. Ning
- 1989
- VLSI-TSA 1989
23 ps/2.1 mW ECL gate
- Kai-Yap Toh
- C.T. Chuang
- et al.
- 1989
- ISSCC 1989
A self-aligned inverse-T gate fully overlapped LDD device for sub-half micron CMOS
- D.S. Wen
- C.C.-H. Hsu
- et al.
- 1989
- IEDM 1989
A 27 GHz 20 ps PNP technology
- J. Warnock
- P.F. Lu
- et al.
- 1989
- IEDM 1989
Submicron high performance bipolar technology
- T.C. Chen
- J.D. Cressler
- et al.
- 1989
- VLSI Technology 1989
A comparative study of hot-carrier instabilities in p- and n-type poly gate MOSFETs
- C.C.-H. Hsu
- D.S. Wen
- et al.
- 1989
- IEDM 1989
Sub-300-ps CBL Circuits
- S.K. Wiedmann
- Tze Chiang Chen
- et al.
- 1989
- IEEE Electron Device Letters
The Design and Electrical Characteristics of High-Performance Single-Poly Ion-Implanted Bipolar Transistors
- Denny Duan-Lee Tang
- Tze-Chiang Chen
- et al.
- 1989
- IEEE T-ED