A comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- Choonghyun Lee
- Shogo Mochizuki
- et al.
- 2017
- IEDM 2017
Publications
Date
Featured collections
Popular topics
28 results for Catherine Labelle
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
Nanoporous materials integration into advanced microprocessors
- E. Todd Ryan
- Cathy Labelle
- et al.
- 2005
- MRS Spring Meeting 2005
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
- W.-H. Lee
- A. Waite
- et al.
- 2005
- IEDM 2005
Introduction of pre-etch deposition techniques in EUV patterning
- Xun Xiang
- Genevieve Beique
- et al.
- 2018
- SPIE Advanced Lithography 2018
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
- N. Loubet
- T.B. Hook
- et al.
- 2017
- VLSI Technology 2017
Middle of line RC performance study at the 7 nm node
- Susan Su Chen Fan
- James H.-C. Chen
- et al.
- 2017
- IITC 2017
Methods to lower the resistivity of ruthenium interconnects at 7 nm node and beyond
- Xunyuan Zhang
- Huai Huang
- et al.
- 2017
- IITC 2017
CMP: Consideration of stop-on selectivity in advanced node semiconductor manufacturing technology
- Stan Tsai
- Hari Amanapu
- et al.
- 2017
- ECS Meeting 2017 - New Orleans