Graphene technology with inverted-T gate and RF passives on 200 mm platform
- Shu-Jen Han
- Alberto Valdes-Garcia
- et al.
- 2011
- IEDM 2011
Publications
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27 results for Ernst Kratschmer
A 0.021 μm2 trigate SRAM cell with aggressively scaled gate and contact pitch
- Michael A. Guillorn
- Josephine Chang
- et al.
- 2011
- VLSI Technology 2011
Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping
- M. Guillorn
- J. Chang
- et al.
- 2009
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Image processing using shape recognition for alignment to damaged registration marks in electron beam lithography
- E. Kratschmer
- D.P. Klaus
- et al.
- 2009
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Trigate 6T SRAM scaling to 0.06 μm2
- M. Guillorn
- J. Chang
- et al.
- 2009
- IEDM 2009
Demonstration of highly scaled FinFET SRAM cells with high-Κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond
- H. Kawasaki
- M. Khater
- et al.
- 2008
- IEDM 2008
Experimental optimization of the electron-beam proximity effect forward scattering parameter
- M.J. Rooks
- N. Belic
- et al.
- 2005
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Low stress development of poly(methylmethacrylate) for high aspect ratio structures
- M.J. Rooks
- E. Kratschmer
- et al.
- 2002
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
E-beam writing: A next-generation lithography approach for thin-film head critical features
- R.E. Fontana
- J.A. Katine
- et al.
- 2002
- IEEE Transactions on Magnetics
Energy distributions of Zr/O/W Schottky electron emission
- H.S. Kim
- M.L. Yu
- et al.
- 1997
- Journal of Applied Physics