Selective epitaxial channel ground plane thin SOI CMOS devices
- Zhibin Ren
- M. Ieong
- et al.
- 2005
- IEDM 2005
Publications
Date
Featured collections
Popular topics
79 results for Jin Cai
Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- J. Cai
- K. Rim
- et al.
- 2004
- IEDM 2004
Device Design Considerations for Ultra-Thin SOI MOSFETs
- B. Doris
- M. Ieong
- et al.
- 2003
- IEDM 2003
Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs
- K. Rim
- S. Narasimha
- et al.
- 2002
- IEDM 2002
The effective drive current in CMOS inverters
- M.H. Na
- E. Nowak
- et al.
- 2002
- IEDM 2002
Very high performance 50 nm CMOS at low temperature
- S.J. Wind
- L.T. Shi
- et al.
- 1999
- IEDM 1999
A comparison of short-channel control in planar bulk and fully depleted devices
- Ramachandran Muralidhar
- Jin Cai
- et al.
- 2012
- IEEE Electron Device Letters
Effect of uniaxial strain on the drain current of a heterojunction tunneling field-effect transistor
- Paul M. Solomon
- Isaac Lauer
- et al.
- 2011
- IEEE Electron Device Letters
High-performance partially depleted SOI PFETs with in situ doped sige raised source/drain and implant-free extension
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2011
- IEEE Electron Device Letters
High-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- Marwan H. Khater
- Zhen Zhang
- et al.
- 2010
- IEEE Electron Device Letters