Jae-Sung Rieh, Jin Cai, et al.
IEEE Transactions on Electron Devices
The short-channel effects (SCEs) of planar bulk and fully depleted finFET devices have been compared using the same junction overlap and lateral gradient, and it is shown that, for finFET devices, a significant component of electrostatic control arises from a naturally present shallow extension junction. When such shallow junctions are applied to a bulk device, we show that the SCE becomes comparable to that of a finFET. Furthermore, we show that, if an embedded source/drain stressor is incorporated in a bulk device, it will not degrade the short-channel benefit of the ultrashallow junctions. The ability to span a wide power/performance range by doping and the improvement in SCEs by the use of ultrashallow extension junctions can potentially extend the life of bulk-type technologies. © 2012 IEEE.
Jae-Sung Rieh, Jin Cai, et al.
IEEE Transactions on Electron Devices
Elbert Huang, Eric Joseph, et al.
IEEE International SOI Conference 2008
Daeyeon Kim, Yoonmyung Lee, et al.
ISLPED 2009
Markus Brink, Isaac Lauer, et al.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics