Process characterization of pitch-split resist materials for application at 16nm node
- Steven J. Holmes
- Cherry Tang
- et al.
- 2010
- Proceedings of SPIE - The International Society for Optical Engineering 2010
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40 results for Steven J. Holmes
Fabrication of dual damascene BEOL structures using a multi-level multiple exposure (MLME) scheme - Part 2. RIE-based pattern transfer and completion of dual damascene process yielding an electrically functional via chain
- Stefan Harrer
- John C Arnold
- et al.
- 2010
- Proceedings of SPIE - The International Society for Optical Engineering 2010
Challenges and solutions of extremely thin SOI (ETSOI) for CMOS scaling to 22nm node and beyond
- Kangguo Cheng
- Ali Khakifirooz
- et al.
- 2010
- CSTIC 2010
22-nm-node technology active-layer patterning for planar transistor devices
- Ryoung-Han Kim
- Steven Holmes
- et al.
- 2010
- J. Micro/Nanolithogr. MEMS MOEMS
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- IEDM 2009
Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Overcoming the challenges of 22-nm node patterning through litho-design co-optimization
- Martin Burkharde
- J.C. Arnold
- et al.
- 2009
- SPIE Advanced Lithography 2009
22 nm technology node active layer patterning for planar transistor devices
- Ryoung-Han Kim
- Steven Holmes
- et al.
- 2009
- SPIE Advanced Lithography 2009
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
Silicon containing polymer in applications for 193 nm high NA lithography processes
- Scan Bums
- Dirk Pfeiffer
- et al.
- 2006
- SPIE Advanced Lithography 2006