Ab initio study of metal grain orientation-dependent work function and its impact on FinFET variability
- Samarth Agarwal
- Rajan Kumar Pandey
- et al.
- 2013
- IEEE T-ED
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30 results for Kota V. R. M. Murali
Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal-oxide-semiconductor devices
- Rajan K. Pandey
- Rajesh Sathiyanarayanan
- et al.
- 2013
- Journal of Applied Physics
Dielectric properties of Si3-ξGeξN4 and Si3-ξCξN4: A density functional study
- Kanchan Ulman
- Rajesh Sathiyanarayanan
- et al.
- 2013
- Journal of Applied Physics
Multiscale model for phonon-assisted band-to-band tunneling in semiconductors
- Arvind Ajoy
- S.E. Laux
- et al.
- 2013
- Journal of Applied Physics
Effect of band-to-band tunneling on junctionless transistors
- Suresh Gundapaneni
- Mohit Bajaj
- et al.
- 2012
- IEEE T-ED
Brillouin zone unfolding of complex bands in a nearest neighbour tight binding scheme
- Arvind Ajoy
- Kota V.R.M. Murali
- et al.
- 2012
- Journal of Physics Condensed Matter
A binary tunnel field effect transistor with a steep sub-threshold swing and increased on current
- Ram Asra
- Kota V. R. M. Murali
- et al.
- 2010
- Japanese Journal of Applied Physics
Crystallographic-orientation-dependent gate-induced drain leakage in nanoscale MOSFETs
- Rajan K. Pandey
- Kota V. R. M. Murali
- et al.
- 2010
- IEEE T-ED
External bias dependent direct to indirect band gap transition in graphene nanoribbon
- Kausik Majumdar
- Kota V. R. M. Murali
- et al.
- 2010
- Nano Letters
Intrinsic limits of subthreshold slope in biased bilayer graphene transistor
- Kausik Majumdar
- Kota V. R. M. Murali
- et al.
- 2010
- Applied Physics Letters