M.V. Fischetti, N. Sano, et al.
SISPAD 1996
We present a TCAD (Technology Computer Aided Design) compatible multiscale model of phonon-assisted band-to-band tunneling in semiconductors, which incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture the measured current-voltage data in silicon, for current transport along the [100], [110], and [111] directions. Our model will be useful to predict band-to-band tunneling phenomena to quantify on and off currents in tunnel FETs and in small geometry MOSFETs and FINFETs. © 2013 American Institute of Physics.
M.V. Fischetti, N. Sano, et al.
SISPAD 1996
M.V. Fischetti, S.E. Laux
Physical Review B
S. Tiwari, M.V. Fischetti, et al.
IEDM 1990
S.E. Laux
IEEE Electron Device Letters