The over-bump applied resin wafer-level underfill process: Process, material and reliability
- Claudius Feger
- Nancy LaBianca
- et al.
- 2009
- ECTC 2009
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35 results for Steven Steen
Enabling SOI-based assembly technology for three-dimensional (3D) integrated circuits (ICs)
- A. Topol
- D.C. La Tulipe
- et al.
- 2005
- IEDM 2005
Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004
High mobility p-channel germanium MOSFETS with a thin Ge oxynitride gate dielectric
- Huiling Shang
- Harald Okorn-Schmidt
- et al.
- 2002
- IEDM 2002
Non-invasive timing analysis of IBM G6 microprocessor L1 cache using backside time-resolved hot electron luminescence
- S. Polonsky
- D.R. Knebel
- et al.
- 2000
- ISSCC 2000
Lateral displacement induced disorder in L10-FePt nanostructures by ion-implantation
- N. Gaur
- S. Kundu
- et al.
- 2013
- Scientific Reports
Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias
- S.J. Koester
- K.L. Saenger
- et al.
- 2005
- IEEE Electron Device Letters
Electrical characterization of germanium p-channel MOSFETs
- H. Shang
- H. Okorn-Schimdt
- et al.
- 2003
- IEEE Electron Device Letters
Investigation of electrostatic body control in accumulated body MOSFETs
- Mustafa B. Akbulut
- Faruk Dirisaglik
- et al.
- 2014
- DRC 2014
Narrow-channel accumulated-body bulk Si MOSFETs with wide-range dynamic threshold voltage tuning
- Mustafa B. Akbulut
- Faruk Dirisaglik
- et al.
- 2013
- DRC 2013