Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing
- G. Shahidi
- B. Davari
- et al.
- 1990
- IEDM 1990
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131 results for J. Warnock
A 26 ps self-aligned epitaxial silicon base bipolar technology
- J.H. Comfort
- P.F. Lu
- et al.
- 1990
- VLSI Technology 1990
35 GHz/35 psec ECL pnp technology
- J. Warnock
- P.F. Lu
- et al.
- 1990
- IEDM 1990
Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
- J.H. Comfort
- G.L. Patton
- et al.
- 1990
- IEDM 1990
50-GHz Self-Aligned Silicon Bipolar Transistors with Ion-Implanted Base Profiles
- James Warnock
- John D. Cressler
- et al.
- 1990
- IEEE Electron Device Letters
Scaling The Silicon Bipolar Transistor For Sub-100-Ps Ecl Circuit Operation At Liquid Nitrogen Temperature
- John D. Cressler
- Tze-Chiang Chen
- et al.
- 1990
- IEEE T-ED
Magnetoreflectivity study of excitons in (Zn,Co)Se epilayers
- X. Liu
- A. Petrou
- et al.
- 1989
- Applied Physics Letters
A 27 GHz 20 ps PNP technology
- J. Warnock
- P.F. Lu
- et al.
- 1989
- IEDM 1989
A new planarization technique, using a combination of RIE and chemical mechanical polish (CMP)
- B. Davari
- C. Koburger
- et al.
- 1989
- IEDM 1989
Submicron high performance bipolar technology
- T.C. Chen
- J.D. Cressler
- et al.
- 1989
- VLSI Technology 1989