Bipolar junction transistor based sensors for chemical and biological sensingSufi ZafarTak H. Ning2016ESSDERC 2016
Physics based PBTI model for accelerated estimation of 10 year lifetimeSufi ZafarA. Kerberet al.2014VLSI Technology 2014
Detailed study of fast transient relaxation of Vt instability in HKMG nFETsK. ZhaoJames Stathiset al.2012IRPS 2012
Extremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyondK. ChoiH. Jagannathanet al.2009VLSI Technology 2009
Impact of NBTI and PBTI in SRAM bit-cells: Relative sensitivities and guidelines for application-specific target stability/performanceAditya BansalRahul Raoet al.2009IRPS 2009
High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processingM. ChudzikB. Doriset al.2007VLSI Technology 2007
Materials and process integration issues in metal gate/high-k stacks and their dependence on device performanceA.C. CallegariK. Babichet al.2007ECS Meeting 2007
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyondV. NarayananV.K. Paruchuriet al.2006VLSI Technology 2006
A comparative study of NBTI and PBTI (Charge Trapping) in SiO 2/HfO2 stacks with FUSI, TiN, Re gatesS. ZafarY.-H. Kimet al.2006VLSI Technology 2006