The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
- Andreas Schenk
- Saurabh Sant
- et al.
- 2017
- SISPAD 2017
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9 results for Lars-Erik Wernersson
Junctionless tri-gate InGaAs MOSFETs
- C. B. Zota
- Mattias Borg
- et al.
- 2017
- Japanese Journal of Applied Physics
Electrical properties of GaSb/InAsSb core/shell nanowires
- Bahram Ganjipour
- Sobhan Sepehri
- et al.
- 2014
- Nanotechnology
III-V compound semiconductor transistors - From planar to nanowire structures
- Heike Riel
- Lars-Erik Wernersson
- et al.
- 2014
- MRS Bulletin
Time-resolved X-ray diffraction investigation of the modified phonon dispersion in InSb nanowires
- A. Jurgilaitis
- H. Enquist
- et al.
- 2014
- Nano Letters
Measurements of light absorption efficiency in InSb nanowires
- A. Jurgilaitis
- H. Enquist
- et al.
- 2013
- Structural Dynamics
Synthesis and properties of antimonide nanowires
- Mattias B. Borg
- Lars-Erik Wernersson
- 2013
- Nanotechnology
Single InAs/GaSb nanowire low-power CMOS inverter
- Anil W. Dey
- Johannes Svensson
- et al.
- 2012
- Nano Letters
Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
- B. Mattias Borg
- Martin Ek
- et al.
- 2012
- Applied Physics Letters