Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors
- Christos Dimitrakopoulos
- Yu-Ming Lin
- et al.
- 2010
- Journal of Vacuum Science and Technology B
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25 results for Yanning Sun
Decoupling graphene from SiC(0001) via oxidation
- Satoshi Oida
- Fenton R. McFeely
- et al.
- 2010
- Physical Review B - CMMP
Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs
- Marinus Hopstaken
- Dirk Pfeiffer
- et al.
- 2010
- ECS Transactions
High mobility III-V channel MOSFETs for post-Si CMOS applications
- Yanning Sun
- E.W. Kiewra
- et al.
- 2009
- ICICDT 2009
InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology
- Uttam Singisetti
- Mark A. Wistey
- et al.
- 2009
- Physica Status Solidi (C) Current Topics in Solid State Physics
CMOS scaling beyond 22 nm node
- D.K. Sadana
- S.W. Bedell
- et al.
- 2009
- ECS Meeting 2009
High performance long- and short-channel in0.7ga 0.3as-channel MOSFETs
- Yanning Sun
- E.W. Kiewra
- et al.
- 2008
- DRC 2008
Scaling of ino.7gao.3as buried-channel MOSFETs
- Yanning Sun
- E.W. Kiewra
- et al.
- 2008
- IEDM 2008
Inversion mode n -channel GaAs field effect transistor with high- k /metal gate
- J.P. De Souza
- E.W. Kiewra
- et al.
- 2008
- Applied Physics Letters
Enhancement-mode in0.70Ga0.30As-channel MOSFETs with ALD Al2O3
- Yanning Sun
- E.W. Kiewra
- et al.
- 2007
- DRC 2007