D.L. Rath, R. Ravikumar, et al.
Diffusion and Defect Data Pt.B: Solid State Phenomena
III-V compound semiconductors have received renewed attention as the channel materials for future generation CMOS technology. High performance long-channel GaAs MOSFETs and short-channel InGaAs MOSFETs are demonstrated. High current of 960 μA/μm and transconductance of 793 μS/μm have been achieved. Scaling behavior has been investigated experimentally down to 80 nm for the first time in III-V MOSFETs. Good scaling behavior is observed for on-state current, transconductance, as well as the virtual source velocity. ©2009 IEEE.
D.L. Rath, R. Ravikumar, et al.
Diffusion and Defect Data Pt.B: Solid State Phenomena
K.L. Saenger, J.P. De Souza, et al.
ECS Meeting 2007
Rajiv Joshi, Rouwaida Kanj
ICICDT 2009
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ECS Meeting 2006