Overcoming the challenges of 22-nm node patterning through litho-design co-optimization
- Martin Burkharde
- J.C. Arnold
- et al.
- 2009
- SPIE Advanced Lithography 2009
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74 results for Vamsi Paruchuri
Electrical and materials characterization of reactive and co-sputtered tantalum carbide metal electrodes for high-K gate applications
- L.F. Edge
- T. Vo
- et al.
- 2009
- ECS Meeting 2009
Engineering band-edge high-κ/metal gate n-MOSFETs with cap layers containing group IIA and IIIB elements by atomic layer deposition
- H. Jagannathan
- L.F. Edge
- et al.
- 2009
- ECS Meeting 2009
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
High-K gate dielectric structures by atomic layer deposition for the 32nm and beyond nodes
- R.D. Clark
- S. Consiglio
- et al.
- 2008
- ECS Meeting 2008
High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
- M. Chudzik
- B. Doris
- et al.
- 2007
- VLSI Technology 2007
Band edge high-K /metal gate n-MOSFETs using ultra thin capping layers
- V.K. Paruchuri
- V. Narayanan
- et al.
- 2007
- VLSI-TSA 2007
Recent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacks
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2007
- Microelectronic Engineering
Recent advances in search for suitable high-k/metal gate solutions to replace SiON/Poly-silicon gate stacks in CMOS devices for 45nm and beyond technologies
- B.P. Linder
- V.K. Paruchuri
- et al.
- 2007
- ECS Meeting 2007
Examination of flatband and threshold voltage tuning of HfO2/TiN field effect transistors by dielectric cap layers
- S. Guha
- V.K. Paruchuri
- et al.
- 2007
- Applied Physics Letters