High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
- Q. Liu
- M. Vinet
- et al.
- 2013
- IEDM 2013
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12 results for M. Vinet
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
- K. Cheng
- A. Khakifirooz
- et al.
- 2012
- IEDM 2012
The future transistors
- Wei Cao
- Huiming Bu
- et al.
- 2023
- Nature
First demonstration of 3D SRAM through 3D monolithic integration of InGaAs n-FinFETs on FDSOI Si CMOS with inter-layer contacts
- Veeresh Deshpande
- Herwig Hahn
- et al.
- 2017
- VLSI Technology 2017
Impact of source/drain silicon cap on FDSOI SiGe pMOSFET performance
- E. Augendre
- S. Maitrejean
- et al.
- 2015
- S3S 2015
Device design considerations for next generation CMOS technology: Planar FDSOI and FinFET (Invited)
- Bruce Doris
- Kangguo Cheng
- et al.
- 2013
- VLSI-TSA 2013
Development of KrF hybrid resist for a dual isolation application
- Sen Liu
- Steven Holmes
- et al.
- 2013
- SPIE Advanced Lithography 2013
Evaluation of sSOI wafers for 22nm node and beyond
- F. Allibert
- Kangguo Cheng
- et al.
- 2012
- S3S 2012
Impact of back bias on ultra-thin body and BOX (UTBB) devices
- Q. Liu
- Frederic Monsieur
- et al.
- 2011
- VLSI Technology 2011
Ultra-thin Body and BOX (UTBB) device for aggressive scaling of CMOS technology
- Q. Liu
- A. Yagishita
- et al.
- 2011
- CSTIC 2011