The future transistors
- Wei Cao
- Huiming Bu
- et al.
- 2023
- Nature
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12 results for M. Vinet
Demonstration of 3-D SRAM Cell by 3-D Monolithic Integration of InGaAs n-FinFETs on FDSOI CMOS with Interlayer Contacts
- Veeresh Deshpande
- Herwig Hahn
- et al.
- 2017
- IEEE T-ED
First demonstration of 3D SRAM through 3D monolithic integration of InGaAs n-FinFETs on FDSOI Si CMOS with inter-layer contacts
- Veeresh Deshpande
- Herwig Hahn
- et al.
- 2017
- VLSI Technology 2017
Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28 nm node and beyond
- Bruce Doris
- B. Desalvo
- et al.
- 2016
- Solid-State Electronics
Impact of source/drain silicon cap on FDSOI SiGe pMOSFET performance
- E. Augendre
- S. Maitrejean
- et al.
- 2015
- S3S 2015
High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
- Q. Liu
- M. Vinet
- et al.
- 2013
- IEDM 2013
Device design considerations for next generation CMOS technology: Planar FDSOI and FinFET (Invited)
- Bruce Doris
- Kangguo Cheng
- et al.
- 2013
- VLSI-TSA 2013
Development of KrF hybrid resist for a dual isolation application
- Sen Liu
- Steven Holmes
- et al.
- 2013
- SPIE Advanced Lithography 2013
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
- K. Cheng
- A. Khakifirooz
- et al.
- 2012
- IEDM 2012
Evaluation of sSOI wafers for 22nm node and beyond
- F. Allibert
- Kangguo Cheng
- et al.
- 2012
- S3S 2012