Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

Date

Start

End

Featured collections

Popular topics

46 results for Dae-Gyu Park

First demonstration of high-Ge-content strained-Si_1-xGe_x (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2014
- IEDM 2014
Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs
- - H. Miki
  - N. Tega
  - et al.
- 2012
- IEDM 2012
Complementary thin-base symmetric lateral bipolar transistors on SOI
- - Jin Cai
  - Tak H. Ning
  - et al.
- 2011
- IEDM 2011
Hysteretic drain-current behavior due to random telegraph noise in scaled-down FETs with high-κ/metal-gate stacks
- - Hiroshi Miki
  - Naoki Tega
  - et al.
- 2010
- IEDM 2010
Reduction of random telegraph noise in high-κ / metal-gate stacks for 22 nm generation FETs
- - N. Tega
  - H. Miki
  - et al.
- 2009
- IEDM 2009
Extendibility of NiPt silicide contacts for CMOS technology demonstrated to the 22-nm node
- - Kazuya Ohuchi
  - Christian Lavoie
  - et al.
- 2007
- IEDM 2007
A comparison of short-channel control in planar bulk and fully depleted devices
- - Ramachandran Muralidhar
  - Jin Cai
  - et al.
- 2012
- IEEE Electron Device Letters
Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- - Zhen Zhang
  - F. Pagette
  - et al.
- 2010
- IEEE Electron Device Letters
High-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- - Marwan H. Khater
  - Zhen Zhang
  - et al.
- 2010
- IEEE Electron Device Letters
Resistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm²
- - Adam Pyzyna
  - Hsinyu Tsai
  - et al.
- 2017
- IITC 2017