Ge-on-insulator lateral bipolar transistors
- Jeng-Bang Yau
- Joonah Yoon
- et al.
- 2016
- BCTM 2016
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46 results for Dae-Gyu Park
Prospects of high-Ge-content strained SiGe for advanced FinFET generations
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2016
- PRiME/ECS Meeting 2016
Demonstration of record SiGe transconductance and short-channel current drive in High-Ge-Content SiGe PMOS FinFETs with improved junction and scaled EOT
- Pouya Hashemi
- Kam-Leung Lee
- et al.
- 2016
- VLSI Technology 2016
Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
- Pouya Hashemi
- Takashi Ando
- et al.
- 2016
- VLSI Technology 2016
SiGe-on-insulator symmetric lateral bipolar transistors
- Jeng-Bang Yau
- Jin Cai
- et al.
- 2015
- S3S 2015
High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- Pouya Hashemi
- Takashi Ando
- et al.
- 2015
- VLSI Circuits 2015
Resistivity of copper interconnects beyond the 7 nm node
- Adam Pyzyna
- Robert L. Bruce
- et al.
- 2015
- VLSI Technology 2015
High-mobility High-Ge-Content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- Pouya Hashemi
- Takashi Ando
- et al.
- 2015
- VLSI Technology 2015
Strained-SiGe channel FinFETs for high-performance CMOS: Opportunities and challenges
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2015
- ECS Meeting 2015 Chicago
Plasma post-oxidation for high mobility strained-Ge pFETs with aggressively scaled high-κ dielectrics
- Winston Chern
- Pouya Hashemi
- et al.
- 2014
- ECSSMEQ 2014