A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
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17 results for Satya V. Nitta
BEOL integration of highly damage -resistant porous ultra low-k material using direct CMP and via-first process
- T. Iijima
- Q. Lin
- et al.
- 2006
- IITC 2006
Use of difunctional silylation agents for enhanced repair of post plasma damaged porous low k dielectrics
- S.V. Nitta
- S. Purushothaman
- et al.
- 2005
- AMC 2005
Successful dual damascene integration of extreme low k materials (k < 2.0) using a novel gap fill based integration scheme
- S.V. Nitta
- S. Purushothaman
- et al.
- 2004
- IEDM 2004
Analysis of an extreme low-κ organosilicate dielectric film exposed to representative plasmas and to a restorative process
- M. Colburn
- S.V. Nitta
- et al.
- 2003
- AMC 2003
Electrical integrity of state-of-the-art 0.13 μm SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication
- K.W. Guarini
- A. Topol
- et al.
- 2002
- IEDM 2002
Opportunities and challenges in ultra low k dielectrics for interconnect applications
- S. Purushothaman
- S.V. Nitta
- et al.
- 2001
- Technical Digest-International Electron Devices Meeting