Formation mechanism and suppression methods of copper dendrites in BEOL integration
- Shaoning Yao
- Wei-Tsu Tseng
- et al.
- 2011
- ADMETA 2011
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31 results for Matthew Angyal
Invasion percolation model for abnormal TDDB characteristic of ULK dielectrics with Cu interconnect at advanced technology nodes
- F. Chen
- Michael Shinosky
- et al.
- 2011
- IRPS 2011
Effect of impurity on Cu electromigration
- C.-K. Hu
- Matthew Angyal
- et al.
- 2010
- International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010
CoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- E. Huang
- M. Oh
- et al.
- 2009
- ADMETA 2009
UV curing-induced photoresist poisoning in advanced ULK BEOL integration schemes
- Y.C. Ee
- D. Kioussis
- et al.
- 2009
- ADMETA 2009
A comparative study of ULK conduction mechanisms and TDDB characteristics for Cu interconnects with and without CoWP metal cap at 32nm technology
- F. Chen
- E. Huang
- et al.
- 2010
- IITC 2010
Effect of TaN stoichiometry on barrier oxidation and defect density in 32nm Cu/ultra-low K interconnects
- Andrew H. Simon
- Frieder Baumann
- et al.
- 2010
- MRS Online Proceedings Library
High performance 32nm SOI CMOS with high-k/metal gate and 0.149μm 2 SRAM and ultra low-k back end with eleven levels of copper
- B. Greene
- Q. Liang
- et al.
- 2009
- VLSI Technology 2009
Critical ultra low-k TDDB reliability issues for advanced CMOS technologies
- F. Chen
- M. Shinosky
- et al.
- 2009
- IRPS 2009
Interconnect performance and scaling strategy for the 22 nm node and beyond
- James H.-C. Chen
- Lijun Jiang
- et al.
- 2008
- ADMETA 2008