Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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25 results for R. R. Robison

Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices
- - H. Jagannathan
  - B. Anderson
  - et al.
- 2021
- IEDM 2021
Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications
- - J. Zhang
  - S. Pancharatnam
  - et al.
- 2019
- IEDM 2019
Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet
- - Chun Wing Yeung
  - Jingyun Zhang
  - et al.
- 2018
- IEDM 2018
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
- - G. Tsutsui
  - Ruqiang Bao
  - et al.
- 2016
- IEDM 2016
High performance 14nm SOI FinFET CMOS technology with 0.0174μm² embedded DRAM and 15 levels of Cu metallization
- - C.-H.C-H. Lin
  - Brian Greene
  - et al.
- 2014
- IEDM 2014
2^nd Generation dual-channel optimization with cSiGe for 22nm HP technology and beyond
- - C. Ortolland
  - Daniel Jaeger
  - et al.
- 2013
- IEDM 2013
22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
- - S. Narasimha
  - P. Chang
  - et al.
- 2012
- IEDM 2012
Resistive Memory Process Optimization for High Resistance Switching Toward Scalable Analog Compute Technology for Deep Learning
- - Youngseok Kim
  - Soon-Cheon Seo
  - et al.
- 2021
- IEEE Electron Device Letters
Bottom electrode properties and electrical field cycling effects on hfox based resistive switching memory device
- - J. Li
  - Youngseok Kim
  - et al.
- 2020
- ISTFA 2020
A Materials Screening Methodology for Scaled Non-Volatile Memory in the AI Era
- - Nicholas A. Lanzillo
  - R. R. Robison
- 2019
- ANTS 2019