CMOS scaling beyond 22 nm node
- D.K. Sadana
- S.W. Bedell
- et al.
- 2009
- ECS Meeting 2009
Publications
Date
Featured collections
Popular topics
60 results for Keith Fogel
Opportunities and challenges for germanium and silicon-germanium channel p-FETs
- S.W. Bedell
- N. Daval
- et al.
- 2009
- ECS Meeting 2009
DC and RF characterization of sub-100-nm-gate-length strained Ge-on-insulator p-MOSFETs
- S.W. Bedell
- A. Majumdar
- et al.
- 2008
- DRC 2008
High performance long- and short-channel in0.7ga 0.3as-channel MOSFETs
- Yanning Sun
- E.W. Kiewra
- et al.
- 2008
- DRC 2008
Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)
- M. Hamaguchi
- H. Yin
- et al.
- 2008
- VLSI Technology 2008
Effect of end-of-range defects on device leakage in direct silicon bonded (DSB) technology
- Haizhou Yin
- M. Hamaguchi
- et al.
- 2008
- VLSI-TSA 2008
Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond
- Haizhou Yin
- C.Y. Sung
- et al.
- 2007
- VLSI Technology 2007
Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
- Yanning Sun
- S.J. Koester
- et al.
- 2007
- CS MANTECH 2007
Enhancement-mode in0.70Ga0.30As-channel MOSFETs with ALD Al2O3
- Yanning Sun
- E.W. Kiewra
- et al.
- 2007
- DRC 2007
Understanding mask-edge and trench-edge defects produced during solid phase epitaxy of amorphized regions in (001) and (Oil) Si: Observations and model
- Katherine L. Saenger
- Haizhou Yin
- et al.
- 2007
- MRS Spring 2007