DC and RF characterization of sub-100-nm-gate-length strained Ge-on-insulator p-MOSFETs

S.W. Bedell, K.E. Fogel, et al.

ECS Meeting 2006

D. Singh, Keith A. Jenkins, et al.

IEEE Electron Device Letters

D.K. Sadana, M. Yang, et al.

ECS Meeting 2006

M. Soyuer, J.N. Burghartz, et al.

BCTM 1996