PublicationDRC 2008Conference paperDC and RF characterization of sub-100-nm-gate-length strained Ge-on-insulator p-MOSFETsDRC 2008View publicationAbstractNo abstract available.Home↳ PublicationsDate01 Dec 2008PublicationDRC 2008AuthorsS.W. BedellA. MajumdarKeith A. JenkinsJ.A. OttJ.C. ArnoldK.E. FogelS.J. KoesterD.K. SadanaIBM-affiliated at time of publicationShare