Activation of implanted n-type dopants in Ge over the active concentration of 1× 1020 cm-3 using coimplantation of Sb and P
- Jeehwan Kim
- Stephen W. Bedell
- et al.
- 2009
- Electrochemical and Solid-State Letters
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100 results for Stephen W. Bedell
Single-crystalline Germanium thin films by electrodeposition and solid-phase epitaxy
- Q. Huang
- S.W. Bedell
- et al.
- 2007
- Electrochemical and Solid-State Letters
Study of HCl and secco defect etching for characterization of thick sSOI
- A. Abbadie
- S.W. Bedell
- et al.
- 2007
- JES
Strain and lattice engineering for Ge FET devices
- S.W. Bedell
- A. Reznicek
- et al.
- 2006
- Materials Science in Semiconductor Processing
Germanium channel MOSFETs: Opportunities and challenges
- Huiling Shang
- Martin M. Frank
- et al.
- 2006
- IBM J. Res. Dev
Defects and strain relaxation in silicon-germanium-on-insulator formed by high-temperature oxidation
- S.W. Bedell
- K.E. Fogel
- et al.
- 2004
- Applied Physics Letters
Observation of stacking faults in strained Si layers
- S.W. Bedell
- K.E. Fogel
- et al.
- 2004
- Applied Physics Letters
Quick turnaround technique for highlighting defects in thin Si/SiGe bilayers
- S.W. Bedell
- D.K. Sadana
- et al.
- 2004
- Electrochemical and Solid-State Letters
Surface Segregation of Al of the Bilayers of Pure Cu and Cu-Al Alloy Films
- Pei-I. Wang
- S.P. Murarka
- et al.
- 2001
- JES
Investigation of surface blistering of hydrogen implanted crystals
- Stephen W. Bedell
- William A. Lanford
- 2001
- Journal of Applied Physics