Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
A chemical defect etching technique is described that permits accurate determination of defect density in thin Si/SiGe bilayer films. The etching technique is capable of distinguishing between isolated defect pits, such as threading defects, and planar defects in the top Si layer within the resolution of optical microscopy. A strained Si layer grown on a silicon-germanium-on- insulator substrate with a 40 atom % Ge content was analyzed using the new etching technique and the measured defect density compared well with plan-view transmission electron microscopy (PV-TEM) and cross-sectional TEM (X-TEM) results. X-TEM revealed that the planar defects observed in the defect etching images correspond to microtwin defects. © 2004 The Electrochemical Society. All rights reserved.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures