High-efficiency thin-film InGaP/(In)GaAs/Ge multijunction solar cells enabled by controlled spalling technology
- Davood Shahrjerdi
- Stephen W. Bedell
- et al.
- 2012
- PVSC 2012
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100 results for Stephen W. Bedell
Microstructure development in epitaxially grown in-situ Boron and Carbon co-doped strained 60% Silicon-Germanium layers
- Alexander Reznicek
- Thomas N. Adam
- et al.
- 2012
- ECS Meeting 2012
Aggressive sige channel gate stack scaling by remote oxygen scavenging: Gate-first pFET performance and reliability
- Martin M. Frank
- Eduard A. Cartier
- et al.
- 2012
- ECS Meeting 2012
Cost-effective layer transfer by controlled spalling technology
- Stephen W. Bedell
- Davood Shahrjerdi
- et al.
- 2012
- ISSWB 2012
Strained high percentage (60%) boron doped silicon-germanium alloys - Strain, dopant substitionality, carrier concentration, resistivity, and microstructure development
- Alexander Reznicek
- Thomas N. Adam
- et al.
- 2012
- ISTDM 2012
Ultra low temperature epitaxial growth of strained Si directly on Si substrates
- Davood Shahrjerdi
- Bahman Hekmatshoar
- et al.
- 2012
- ECS Meeting 2012
Are Si/SiGe tunneling field-effect transistors a good idea?
- Steven J. Koester
- Isaac Lauer
- et al.
- 2010
- ECS Transactions
Strain engineering for fully-depleted SOI devices
- Ali Khakifirooz
- Pranita Kulkarni
- et al.
- 2010
- ECS Transactions
Low-temperature epitaxial growth of Si, SiGe, Ge, and SiC in a 300mm UHV/CVD reactor
- Thomas N. Adam
- Stephen W. Bedell
- et al.
- 2010
- ECS Transactions
Applications of epitaxy for semiconductor technology
- Devendra Sadana
- Stephen W. Bedell
- et al.
- 2010
- ECS Transactions