Conference paper
Materials challenges for III-V/Si co-integrated CMOS
Devendra Sadana, Cheng-Wei Cheng, et al.
CICC 2015
Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-beam based nano-TLM devices. Record low contact resistivities ∼1.5× 10-9 Ω · cm2 are extracted from Ni(Pt) silicide contacts on in situ boron-doped Si0.7Ge 0.3 with a chemical boron-doping density of 2× 10 21/cm3. This is very promising for pMOS applications beyond the 10-nm node. A clear dependence of contact resistance on the silicide thickness has also been found. © 1980-2012 IEEE.
Devendra Sadana, Cheng-Wei Cheng, et al.
CICC 2015
Thomas N. Adam, Stephen W. Bedell, et al.
ECS Transactions
P. Hashemi, M. Kobayashi, et al.
VLSI Circuits 2013
Tuan T. Tran, Christian Lavoie, et al.
Applied Surface Science