Ultra low contact resistivities for CMOS beyond 10-nm node

Abstract

Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-beam based nano-TLM devices. Record low contact resistivities ∼1.5× 10-9 Ω · cm2 are extracted from Ni(Pt) silicide contacts on in situ boron-doped Si0.7Ge 0.3 with a chemical boron-doping density of 2× 10 21/cm3. This is very promising for pMOS applications beyond the 10-nm node. A clear dependence of contact resistance on the silicide thickness has also been found. © 1980-2012 IEEE.