Mott transition field effect transistor
- D.M. Newns
- J. Misewich
- et al.
- 1998
- Applied Physics Letters
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84 results for Dennis M. Newns
Constant pressure and temperature molecular-dynamics simulation of the hydrated diphytanolphosphatidylcholine lipid bilayer
- Thomas Husslein
- Dennis M. Newns
- et al.
- 1998
- Journal of Chemical Physics
Molecular dynamics simulation of a synthetic ion channel
- Qingfeng Zhong
- Qing Jiang
- et al.
- 1998
- Biophysical Journal
Atomic-scale studies of electron transport through MOS structures
- H.J. Wen
- R. Ludeke
- et al.
- 1998
- Applied Surface Science
Is there an intrinsic dead layer effect at ferroelectric surfaces?
- C. Zhou
- D.M. Newns
- 1998
- Superlattices and Microstructures
Intrinsic dead layer effect and the performance of ferroelectric thin film capacitors
- C. Zhou
- D.M. Newns
- 1997
- Journal of Applied Physics
Intrinsic dead layer effect and the performance of ferroelectric thin film capacitors
- C. Zhou
- D.M. Newns
- 1997
- Journal of Engineering and Applied Science
A field effect transistor based on the Mott transition in a molecular layer
- C. Zhou
- D.M. Newns
- et al.
- 1997
- Applied Physics Letters
Image force effects and the dielectric response of SiO2 in electron transport across metal-oxide-semiconductor structures
- H.J. Wen
- R. Ludeke
- et al.
- 1997
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Simplex method for calculating two-particle spectral densities in two-dimensional interacting electron systems
- D.M. Newns
- P.C. Pattnaik
- 1996
- Physical Review B - CMMP