Amorphization/templated recrystallization (ATR) method for hybrid orientation substrates
- K.L. Saenger
- J.P. De Souza
- et al.
- 2006
- MRS Spring Meeting 2006
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149 results for John A. Ott
Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs
- H. Nayfeh
- D. Singh
- et al.
- 2006
- IEEE Electron Device Letters
Mobility and CMOS devices/circuits on sub-10nm (110) ultra thin body SOI
- Huiling Shang
- J. Rubino
- et al.
- 2005
- VLSI Technology 2005
Effect of contact liner stress in high-performance FDSOI devices with ultra-thin silicon channels and 30 nm gate lengths
- D. Singh
- J. Hergenrother
- et al.
- 2005
- IEEE International SOI Conference 2005
Development of stacking faults in strained silicon layers
- S.W. Bedell
- A. Reznicek
- et al.
- 2005
- IEEE International SOI Conference 2005
Stress memorization in high-performance FDSOI devices with ultra-thin silicon channels and 25nm gate lengths
- D. Singh
- J. Sleight
- et al.
- 2005
- IEDM 2005
Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates
- Qiqing Ouyang
- Min Yang
- et al.
- 2005
- VLSI Technology 2005
Enabling SOI-based assembly technology for three-dimensional (3D) integrated circuits (ICs)
- A. Topol
- D.C. La Tulipe
- et al.
- 2005
- IEDM 2005
High performance CMOS bulk technology using direct silicon bond (DSB) mixed crystal orientation substrates
- Chun-Yung Sung
- Haizhou Yin
- et al.
- 2005
- IEDM 2005
Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates
- K.L. Saenger
- J.P. De Souza
- et al.
- 2005
- Applied Physics Letters