Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping
- S.J. Koester
- K.L. Saenger
- et al.
- 2005
- IEEE Electron Device Letters
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149 results for John A. Ott
Characteristics of high performance PFETs with embedded SiGe source/drain and 〈100〉 channels on 45° rotated wafers
- Qiqing Ouyang
- Meikei Ieong
- et al.
- 2005
- VLSI Technology 2005
Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias
- S.J. Koester
- K.L. Saenger
- et al.
- 2005
- IEEE Electron Device Letters
Threshold voltage control in NiSi-Gated MOSFETs through SIIS
- Jakub Kedzierski
- Diane Boyd
- et al.
- 2005
- IEEE Transactions on Electron Devices
Strained-silicon / silicon-germanium-on-insulator for high-performance CMOS : A manufacturable process for 300 mm substrates
- A. Reznicek
- S.W. Bedell
- et al.
- 2004
- ECS Meeting 2004
Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004
Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- J. Cai
- K. Rim
- et al.
- 2004
- IEDM 2004
300 mm SGOI/strain-Si for high-performance CMOS
- A. Reznicek
- S.W. Bedell
- et al.
- 2004
- IEEE International SOI Conference 2004
Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- DRC 2004
SiGe MODFETS: Overview and issues for sub-100 nm gate-length scaling
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- ECS Meeting 2004