Conference paper
1.1 GHz MSM photodiodes on relaxed Si1-xGex grown by UHV-CVD
S.J. Koester, B.-U. Klepser, et al.
DRC 1998
We report on the dc and RF characterization of laterally scaled, Si - SiGe n-MODFETs. Devices with gate length, Lg, of 80 nm had fT = 79 Ghz and fmax = 212 Ghz, while devices with Lg = 70 nm had fT as high as 92 Ghz. The MODFETs displayed enhanced fT at reduced drain-to-source voltage, Vds, compared to Si MOSFETs with similar fT at high Vds. © 2005 IEEE.
S.J. Koester, B.-U. Klepser, et al.
DRC 1998
Srijit Goswami, K.A. Slinker, et al.
Nature Physics
E. Tutuc, J.O. Chu, et al.
Applied Physics Letters
S.J. Koester, K. Ismail, et al.
DRC 1997