Opportunities and challenges for germanium and silicon-germanium channel p-FETs
- S.W. Bedell
- N. Daval
- et al.
- 2009
- ECS Meeting 2009
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149 results for John A. Ott
DC and RF characterization of sub-100-nm-gate-length strained Ge-on-insulator p-MOSFETs
- S.W. Bedell
- A. Majumdar
- et al.
- 2008
- DRC 2008
Demonstration of highly scaled FinFET SRAM cells with high-Κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond
- H. Kawasaki
- M. Khater
- et al.
- 2008
- IEDM 2008
Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)
- M. Hamaguchi
- H. Yin
- et al.
- 2008
- VLSI Technology 2008
FinFET performance advantage at 22nm: An AC perspective
- M. Guillorn
- J. Chang
- et al.
- 2008
- VLSI Technology 2008
Effect of end-of-range defects on device leakage in direct silicon bonded (DSB) technology
- Haizhou Yin
- M. Hamaguchi
- et al.
- 2008
- VLSI-TSA 2008
Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs
- Stephen W. Bedell
- Amlan Majumdar
- et al.
- 2008
- IEEE Electron Device Letters
Effect of elevated implant temperature on amorphization and activation in as-implanted silicon-on-insulator layers
- Katherine L. Saenger
- Stephen W. Bedell
- et al.
- 2008
- MRS Spring Meeting 2008
Effects of patterned, stressed SiN overlayers on Si solid phase epitaxy
- K.L. Saenger
- K.E. Fogel
- et al.
- 2008
- Applied Physics Letters
Mixed orientation Si-Si interfaces by hydrophilic bonding and high temperature oxide dissolution
- K.L. Saenger
- J.P. De Souza
- et al.
- 2008
- JES