113-GHz f T graded-base SiGe HBTs
- E.F. Crabbé
- B. Mcyerson
- et al.
- 1993
- Device Research Conference 1993
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33 results for John M. Cotte
A SiGe-base PNP ECL circuit technology
- D.L. Harame
- J.H. Comfort
- et al.
- 1993
- VLSI Technology 1993
An ultra-low thermal-budget SiGe-base bipolar technology
- J.N. Burghartz
- D.A. Grützmacher
- et al.
- 1993
- VLSI Technology 1993
Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition
- D.A. Grützmacher
- T.O. Sedgwick
- et al.
- 1993
- Journal of Electronic Materials
IIA-3 113-GHz fT Graded-Base SiGe HBT's
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEEE Transactions on Electron Devices
A high performance epitaxial SiGe-base ECL BiCMOS technology
- D.L. Harame
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
Heavy arsenic doping of silicon grown by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1992
- Applied Physics Letters
Silicide formation and dopant diffusion in silicon
- M. Wittmer
- P. Fahey
- et al.
- 1992
- Physical Review B
Dopant diffusion in silicides: Effect of diffusion paths
- Carol Stanis
- J.M. Cotte
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
p-type doping of germanium grown by molecular beam epitaxy on Ge(100) substrates
- V.P. Kesan
- Subramanian S. Iyer
- et al.
- 1991
- Applied Physics Letters