3-D silicon integration and silicon packaging technology using silicon through-vias
- John U. Knickerbocker
- Chirag S. Patel
- et al.
- 2006
- IEEE Journal of Solid-State Circuits
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33 results for John M. Cotte
Fabrication challenges for next-generation devices: Microelectromechanical systems for radio-frequency wireless communications
- David Seeger
- Jennifer Lund
- et al.
- 2003
- Journal of Microlithography, Microfabrication and Microsystems
Fabrication challenges for next generation devices: MEMS for RF wireless communications
- David Seeger
- Jennifer Lund
- et al.
- 2002
- Proceedings of SPIE - The International Society for Optical Engineering
Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling
- I.A. Shareef
- G.W. Rubloff
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere
- D.A. Grützmacher
- T.O. Sedgwick
- et al.
- 1993
- Applied Physics Letters
Diffusion of elements implanted in amorphous titanium disilicide
- F.M. d'Heurle
- J.M. Cotte
- et al.
- 1993
- Applied Surface Science
Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition
- D.A. Grützmacher
- T.O. Sedgwick
- et al.
- 1993
- Journal of Electronic Materials
IIA-3 113-GHz fT Graded-Base SiGe HBT's
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEEE Transactions on Electron Devices
Heavy arsenic doping of silicon grown by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1992
- Applied Physics Letters
Silicide formation and dopant diffusion in silicon
- M. Wittmer
- P. Fahey
- et al.
- 1992
- Physical Review B