Methodology for determining CD-SEM measurement condition of sub-20nm resist patterns for 0.33NA EUV lithography
- Nobuhiro Okai
- Erin Lavigne
- et al.
- 2015
- SPIE Advanced Lithography 2015
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48 results for Scott D. Halle
E-beam inspection of EUV mask defects: To etch or not to etch?
- Ravi Bonam
- Hung-Yu Tien
- et al.
- 2014
- SPIE Advanced Lithography 2014
Precise CD-SEM metrology of resist patterns at around 20 nm for 0.33NA EUV lithography
- Nobuhiro Okai
- Erin Lavigne
- et al.
- 2014
- SPIE Advanced Lithography 2014
E-beam inspection of EUV programmed defect wafers for printability analysis
- Ravi Bonam
- Scott Halle
- et al.
- 2013
- ASMC 2013
56 nm pitch copper dual-damascene interconnects with triple pitch split metal and double pitch split via
- James Hsueh-Chung Chen
- Christopher Waskiewicz
- et al.
- 2012
- IITC 2012
Lens heating challenges for negative tone develop layers with freeform illumination: A comparative study of experimental vs. simulated results
- Scott Halle
- Michael Crouse
- et al.
- 2012
- SPIE Advanced Lithography 2012
Dose-focus monitor technique using CD-SEM and application to local variation analysis
- Shoji Hotta
- Timothy Brunner
- et al.
- 2012
- SPIE Advanced Lithography 2012
64 nm pitch Cu dual-damascene interconnects using pitch split double exposure patterning scheme
- Shyng-Tsong Chen
- Hideyuki Tomizawa
- et al.
- 2011
- IITC/MAM 2011
Optimization of pitch-split double patterning phoresist for applications at the 16nm node
- Steven J. Holmes
- Cherry Tang
- et al.
- 2011
- ASMC 2011
Qualification, monitoring, and integration into a production environment of the world's first fully programmable illuminator
- Gregory McIntyre
- Daniel Corliss
- et al.
- 2011
- SPIE Advanced Lithography 2011