Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques
- M. Hopstaken
- D. Pfeiffer
- et al.
- 2012
- Surface and Interface Analysis
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45 results for S. Molis
Robust ultrathin (20-25 nm) trilayer dielectric low k Cu damascene cap for sub-30 nm nanoelectronic devices
- Son Nguyen
- T. Haigh
- et al.
- 2011
- ECS Meeting 2011
Improvement of RC performance for advanced ULK/Cu interconnects with CVD hybrid dielectric/metal liner
- M. Tagami
- C.-C. Yang
- et al.
- 2011
- IITC/MAM 2011
Optimization of porous ultra low- dielectrics (κ≤ 2.55) for 28nm generation
- D. Kioussis
- E.T. Ryan
- et al.
- 2011
- IITC/MAM 2011
Evaluation of direct cu electroplating on Ru: Feature fill, parametric, and reliability
- C.-C. Yang
- B. Li
- et al.
- 2011
- IEEE Electron Device Letters
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
Competitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies
- Rod Augur
- Craig Child
- et al.
- 2010
- ADMETA 2010
Effective Cu surface pre-treatment for high-reliable 22nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k=2.2)
- F. Ito
- H. Shobha
- et al.
- 2010
- ADMETA 2010
CoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- E. Huang
- M. Oh
- et al.
- 2009
- ADMETA 2009
UV curing-induced photoresist poisoning in advanced ULK BEOL integration schemes
- Y.C. Ee
- D. Kioussis
- et al.
- 2009
- ADMETA 2009