22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
- S. Narasimha
- P. Chang
- et al.
- 2012
- IEDM 2012
Publications
Date
Featured collections
Popular topics
16 results for Ronald Bolam
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
- W.-H. Lee
- A. Waite
- et al.
- 2005
- IEDM 2005
High performance 0.18 μm SOI CMOS technology
- E. Leobandung
- E. Barth
- et al.
- 1999
- IEDM 1999
Scalability of SOI technology into 0.13 μm 1.2 V CMOS generation
- E. Leobandung
- M. Sherony
- et al.
- 1998
- IEDM 1998
7.9/5.5 psec room/low temperature SOI CMOS
- F. Assaderaghi
- W. Rausch
- et al.
- 1997
- IEDM 1997
0.25 μm CMOS SOI technology and its application to 4 Mb SRAM
- D. Schepis
- F. Assaderaghi
- et al.
- 1997
- IEDM 1997
A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation
- Ernest Wu
- Ron Bolam
- et al.
- 2022
- IRPS 2022
Fundamental statistical properties of reconstruction methodology for TDDB with variability in BEOL/MOL/FEOL applications
- Ernest Y. Wu
- James Stathis
- et al.
- 2016
- IRPS 2016
Interconnect processes and reliability for RF technology
- Jeffrey P. Gambino
- F. Anderson
- et al.
- 2011
- IPFA 2011
A robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOS
- D.P. Ioannou
- K. Zhao
- et al.
- 2011
- IRPS 2011