EUV chemically amplified resist component distribution and efficiency for stochastic defect control
- Dario Goldfarb
- Olivia Wang
- et al.
- 2020
- SPIE Advanced Lithography 2020
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19 results for Margaret C. Lawson
Performance of tri-layer process required for 22nm and beyond
- Yayi Wei
- Martin Glodde
- et al.
- 2011
- SPIE Advanced Lithography 2011
Building an immersion top coat from the ground up - Materials perspective
- Mahmoud Khojasteh
- Irene Popova
- et al.
- 2007
- SPIE Advanced Lithography 2007
Fluoroalcohol materials with tailored interfacial properties for immersion lithography
- Daniel P. Sanders
- Linda K. Sundberg
- et al.
- 2007
- SPIE Advanced Lithography 2007
High performance 193nm photoresists based on fluorosulfonamide
- Wenjie Li
- Kuang-Jung Chen
- et al.
- 2007
- SPIE Advanced Lithography 2007
193nm single layer photoresists: Defeating tradeoffs with a new class of fluoropolymers
- P.R. Varanasi
- R.W. Kwong
- et al.
- 2005
- Microlithography 2005
Rinse additives for defect suppression in 193 nm and 248 nm lithography
- Spyridon Skordas
- Ryan L. Burns
- et al.
- 2004
- Microlithography 2004
Rinse additives for line edge roughness control in 193 nm lithography
- Dario L. Goldfarb
- Sean D. Burns
- et al.
- 2004
- Microlithography 2004
IBM-JSR 193nm negative tone resist: Polymer design, material properties, and lithographic performance
- Kaushal Patel
- Margaret Lawson
- et al.
- 2004
- Microlithography 2004
Rational design in cyclic olefin resists for sub-100nm lithography
- Wenjie Li
- P. Rao Varanasi
- et al.
- 2003
- Microlithography 2003