Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes
- Takeshi Nogami
- Benjamin D. Briggs
- et al.
- 2015
- IEDM 2015
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33 results for C. Parks
Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals
- Takeshi Nogami
- C. Penny
- et al.
- 2012
- IEDM 2012
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
1.5-V single work-function W/WN/n+-poly gate CMOS device design with 110-nm buried-channel PMOS for 90-nm vertical-cell DRAM
- Rajesh Rengarajan
- Boyong He
- et al.
- 2002
- IEEE Electron Device Letters
Ultrathin conformal multilayer SiNO dielectric cap for capacitance reduction in Cu/low k interconnects
- Deepika Priyadarshini
- Son Van Nguyen
- et al.
- 2016
- IITC/AMC 2016
Advanced metal and dielectric barrier cap films for Cu low k interconnects
- Deepika Priyadarshini
- Son Nguyen
- et al.
- 2014
- IITC/AMC 2014
Ultrathin (8-14 nm) conformal SiN for sub-20 nm Copper/Low-k Interconnects
- Son Van Nguyen
- Deepika Priyadarshini
- et al.
- 2014
- ECS Meeting 2014
CVD-Co/Cu(Mn) integration and reliability for 10 nm node
- Takeshi Nogami
- M. He
- et al.
- 2013
- IITC 2013
Perspectives into CVD-cobalt liner induced increase in resistivity of Cu interconnect
- Wei Lin
- Xunyuan Zhang
- et al.
- 2013
- ADMETA 2013
Electromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects
- A. Simon
- Tibor Bolom
- et al.
- 2013
- IRPS 2013