Publications

47 results for Richard G. Southwick

Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics)
- - Ernest Wu
  - Takashi Ando
  - et al.
- 2020
- Japanese Journal of Applied Physics
NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor
- - Huimei Zhou
  - Miaomiao Wang
  - et al.
- 2020
- IRPS 2020
Analysis of BTI, SHE Induced BTI and HCD under Full V_G/V_D Space in GAA Nano-Sheet N and P FETs
- - Nilotpal Choudhury
  - Uma Sharma
  - et al.
- 2020
- IRPS 2020
Channel Strain Dependence of Tinv in Strained Si and Si_l-xGe_xFETs: Internal Strain-induced Modification of Chemical Oxidation
- - Choonghyun Lee
  - Shogo Mochizuki
  - et al.
- 2019
- VLSI Technology 2019
SiGe Channel CMOS: Understanding Dielectric Breakdown and Bias Temperature Instability Tradeoffs
- - Richard G. Southwick
  - Miaomiao Wang
  - et al.
- 2019
- VLSI Technology 2019
Direct Partition Measurement of Parasitic Resistance Components in Advanced Transistor Architectures
- - Zuoguang Liu
  - Heng Wu
  - et al.
- 2019
- VLSI Technology 2019
Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor
- - Miaomiao Wang
  - Jingyun Zhang
  - et al.
- 2019
- IRPS 2019
On the Frequency Dependence of Bulk Trap Generation during AC Stress in Si and SiGe RMG P-FinFETs
- - Narendra Parihar
  - Uma Sharma
  - et al.
- 2019
- IRPS 2019
Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
- - Choonghyun Lee
  - Richard G. Southwick
  - et al.
- 2018
- IEDM 2018
Differentiated performance and reliability enabled by multi-work function solution in RMG Silicon and SiGe MOSFETs
- - Ruqiang Bao
  - Richard G. Southwick
  - et al.
- 2018
- VLSI Technology 2018