A 45 nm SOI embedded DRAM macro for the POWER™ processor 32 MByte on-chip L3 cache
- John Barth
- Don Plass
- et al.
- 2011
- IEEE Journal of Solid-State Circuits
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34 results for Toshiaki Kirihata
A 1 MB cache subsystem prototype with 1.8 ns embedded DRAMs in 45 nm SOI CMOS
- Peter J. Klim
- John Barth
- et al.
- 2009
- IEEE Journal of Solid-State Circuits
A 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro Sense Amplifier
- John Barth
- William R. Reohr
- et al.
- 2008
- IEEE Journal of Solid-State Circuits
A 7F2 cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAM's
- Heinz Hoenigschmid
- Alexander Frey
- et al.
- 2000
- IEEE Journal of Solid-State Circuits
A 220-mm2, four- and eight-bank, 256-Mb SDRAM with single-sided stitched WL architecture
- Toshiaki Kirihata
- Martin Gall
- et al.
- 1998
- IEEE Journal of Solid-State Circuits
Flexible test mode approach for 256-Mb DRAM
- Toshiaki Kirihata
- Hing Wong
- et al.
- 1997
- IEEE Journal of Solid-State Circuits
Fault-tolerant designs for 256 Mb DRAM
- Toshiaki Kirihata
- Yohji Watanabe
- et al.
- 1996
- IEEE Journal of Solid-State Circuits
A 286 mm2 256 Mb DRAM with ×32 both-ends DQ
- Yohji Watanabe
- Hing Wong
- et al.
- 1996
- IEICE Transactions on Electronics
Fault-tolerant designs for 256 Mb DRAM
- Toshiaki Kirihata
- Yohji Watanabe
- et al.
- 1996
- IEICE Transactions on Electronics
A Variable Precharge Voltage Sensing
- Toshiaki Kirihata
- Sang H. Dhong
- et al.
- 1995
- IEEE Journal of Solid-State Circuits