Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs
- Guangrui Xia
- Hasan M. Nayfeh
- et al.
- 2004
- IEEE Transactions on Electron Devices
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.